Device and method for producing dielectric layers in microwave plasma

US8716153B2 · kind B2 · utility

Assignee

• HQ-DIELECTRICS GMBH · DE

Inventors

• Wilfried Lerch · Blaustein, DE
• Zsolt Nenyel · Blaustein, DE
• Thomas Theiler · Ulm, DE

Key dates

• Filing date: Aug 4, 2009
• Grant date: May 6, 2014
• Expiry date: Apr 26, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/2001
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A device for producing a microwave plasma, and a device and a method for treating semiconductor substrates with a microwave plasma, the microwave plasma device comprising at least one electrode (21, 22, 23), an electrode (21, 22, 23) comprising a coaxial inner conductor (21) made of electrically conductive material and a coaxial outer conductor (22) made of electrically conductive material and surrounding the inner conductor at least partially and being disposed at a distance thereto, and a plasma ignition device (23) that is connected to the coaxial inner conductor (21), characterized in that the coaxial outer conductor (22) comprises at least one first partial region (31) in which it completely surrounds the coaxial inner conductor (21) along the longitudinal axis thereof and comprises at least one further partial region (32) in which it surrounds the coaxial inner conductor (21) partially such that microwave radiation generated by the microwave generator (20) can exit in the at least one further partial region (32) substantially perpendicular to the longitudinal axis of the coaxial inner conductor (21).