Electrode structure for an LED

US8716740B1 · kind B1 · utility

Assignee

• High Power Opto, Inc. · TW

Inventors

• Wei-Yu Yen · Taichung, TW
• Fu-Bang Chen · Banluliao, TW
• Chih-Sung Chang · Taichung, TW

Key dates

• Filing date: Dec 21, 2012
• Grant date: May 6, 2014
• Expiry date: Dec 21, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/82

Abstract

An electrode structure for an LED includes a plurality of blind holes and a plurality of N-type metal electrodes. The LED comprises, in this order by stacking, an intrinsic semiconductor layer, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a bonding layer, a permanent substrate and a P-type electrode. The blind holes are distributed in a pattern and run through the intrinsic semiconductor layer to reach the N-type semiconductor layer. The N-type metal electrodes respectively run through the blind holes to connect the N-type semiconductor layer. Through a 3D contact interface formed by the blind hole, not only contact impedance between the N-type metal electrode and the N-type semiconductor layer can be reduced, the N-type metal electrode also can be firmly held in the blind hole without peeling off.