Power device with self-aligned source regions

US8716783B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Robert Herrick · Lompoc, US
• Becky Losee · Cedar Hills, US
• Dean E. Probst · West Jordan, US

Key dates

• Filing date: Oct 10, 2011
• Grant date: May 6, 2014
• Expiry date: Feb 12, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/905

Abstract

A field effect transistor (FET) includes a plurality of trenches extending into a silicon layer, each trench having upper sidewalls that fan out. Contact openings extend into the silicon layer between adjacent trenches such that each trench and an adjacent contact opening form a common upper sidewall portion. Body regions extend between adjacent trenches. Source regions that are self-aligned to corresponding trenches extend in the body regions adjacent opposing sidewalls of each trench, and have a conductivity type opposite that of the body regions.