Semiconductor device having different fin widths

US8716786B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Peter Baumgartner · Munich, DE
• Domagoj Siprak · Munich, DE

Key dates

• Filing date: Jun 15, 2009
• Grant date: May 6, 2014
• Expiry date: Feb 25, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6217

Abstract

A semiconductor device includes at least one source region and at least one drain region. A plurality of fins extend between a source region and a drain region, wherein at least one fin has a different width than another fin. At least one gate is provided to control current flow through such fins. Fin spacing may be varied in addition to, or alternative to utilizing different fin widths.