3-D single floating gate non-volatile memory device

US8716803B2 · kind B2 · utility

Assignee

• FLASHSILICON INCORPORATION · US

Inventor

• Lee Wang · Diamond Bar, US

Key dates

• Filing date: Oct 4, 2012
• Grant date: May 6, 2014
• Expiry date: Oct 4, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6891

Abstract

A 3-D Single Floating Gate Non-Volatile Memory (SFGNVM) device based on the 3-D fin Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is disclosed. The disclosed Non-Volatile Memory (NVM) device consists of a pair of semiconductor fins and one floating metal gate. The floating metal gate for storing electrical charges to alter the threshold voltage of the fin MOSFET crosses over the pair of semiconductor fins on top of coupling and tunneling dielectrics above the surfaces of the two semiconductor fins. One semiconductor fin with the same type impurity forms the control gate of the non-volatile memory device. The other semiconductor fin is doped with opposite type of impurity in the channel regions under the metal floating gate and with the same type of impurity in the source and drain regions on the sides of the crossed metal floating gate.