Magnetic memory element and nonvolatile memory device
US8716817B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2012 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Apr 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.