Thermally assisted magnetic random access memory element with improved endurance
US8717812B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2011 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Nov 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure concerns a magnetic memory element suitable for a thermally-assisted switching write operation, comprising a current line in electrical communication with one end of a magnetic tunnel junction, the magnetic tunnel junction comprising: a first ferromagnetic layer having a fixed magnetization; a second ferromagnetic layer having a magnetization that can be freely aligned at a predetermined high temperature threshold; and a tunnel barrier provided between the first and second ferromagnetic layer; the current line being adapted to pass a heating current through the magnetic tunnel junction during the write operation; wherein said magnetic tunnel junction further comprises at least one heating element being adapted to generate heat when the heating current is passed through the magnetic tunnel junction; and a thermal barrier in series with said at least one heating element, said thermal barrier being adapted to confine the heat generated by said at least one heating element within the magnetic tunnel junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.