Nonvolatile memory device and method of programming the same
US8717821B2 · kind B2 · utility
4Cited by
2References
10Claims
0Family size
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Key dates
| Filing date | Sep 23, 2011 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Jun 5, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The program method of a nonvolatile memory device includes detecting temperature, setting a step voltage, corresponding to an increment of a program voltage in a program operation of an incremental step pulse program (ISPP) method, wherein the step voltage changes based on the detected temperature, and performing the program operation and a program verification operation based on the set step voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.