Estimation of memory cell wear level based on saturation current
US8717826B1 · kind B1 · utility
4Cited by
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20Claims
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Key dates
| Filing date | Dec 11, 2012 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Dec 20, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/349
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method includes measuring a saturation current flowing through one or more analog memory cells. A wear level of the memory cells is deduced from the measured saturation current. Storage of data in the memory cells is configured based on the deduced wear level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.