Patent · US Active

Semiconductor memory device and method of controlling the same

US8717840B2 · kind B2 · utility

4Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 22, 2013
Grant dateMay 6, 2014
Priority date
Expiry dateFeb 22, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2213/72
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a semiconductor memory device includes a memory cell array including blocks, each block being capable of executing a write, read, or erase operation independently of other blocks. A control portion is configured to execute the operation of a first block among the blocks in a first cycle, set a selection inhibited region within a range of a predetermined distance from the first block, until a temperature relaxation time for relaxing a temperature of the first block has elapsed, set a region except the selection inhibited region among the blocks as a second block, and execute the operation of the second block in a second cycle.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.