Film deposition apparatus
US8721790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2010 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Jun 30, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45578
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.