Magnetic memory devices and methods of manufacturing such magnetic memory devices
US8722211B2 · kind B2 · utility
1Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2010 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Apr 28, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1114
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device may include a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer arranged on a substrate. The tunnel barrier layer may include a crystal structure and may be arranged between the first ferromagnetic layer and the second ferromagnetic layer. At least the first ferromagnetic layer may include a first layer in contact with the tunnel barrier layer and a second layer in contact with the first layer, and an orientation of the first layer with respect to the tunnel barrier layer may be greater than an orientation of the second layer with respect to the tunnel barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.