Patent · US Active

Lithography method and device

US8722320B2 · kind B2 · utility

1Cited by
3References
15Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 27, 2011
Grant dateMay 13, 2014
Priority date—
Expiry dateJan 11, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0338
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Lithography methods and devices are shown that include a semiconductor structure such as a mask. Methods and devices are shown that include a pattern of mask features and a composite feature. Selected mask features include doubled mask features. Methods and devices shown may provide varied feature sizes (including sub-resolution) with a small number of processing steps.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.