Hybrid CMOS nanowire mesh device and FINFET device

US8722472B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Josephine B. Chang · Mahopac, US
• Leland Chang · New York, US
• Chung-Hsun Lin · White Plains, US
• Jeffrey W. Sleight · Ridgefield, US

Key dates

• Filing date: Dec 16, 2011
• Grant date: May 13, 2014
• Expiry date: Feb 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/011
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method of forming a hybrid semiconductor structure on an SOI substrate. The method includes an integrated process flow to form a nanowire mesh device and a FINFET device on the same SOI substrate. Also included is a semiconductor structure which includes the nanowire mesh device and the FINFET device on the same SOI substrate.