Semiconductor device with an electrode including an aluminum-silicon film
US8722487B2 · kind B2 · utility
0Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2012 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Nov 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A semiconductor device, including a silicon substrate having a first major surface and a second major surface, a front surface device structure formed in a region of the first major surface, and a rear electrode formed in a region of the second major surface. The rear electrode includes, as a first layer thereof, an aluminum silicon film that is formed by evaporating or sputtering aluminum-silicon onto the second major surface, the aluminum silicon film having a silicon concentration of at least 2 percent by weight and a thickness of less than 0.3 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.