Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control
US8722546B2 · kind B2 · utility
535Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2012 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Aug 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of RF power to the reaction space while supplying a rare gas and a treatment gas without supplying a Si-containing precursor, whereby a dielectric film having Si—C bonds and/or Si—N bonds is formed on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.