Oxide semiconductor field effect transistor and method for manufacturing the same
US8723175B2 · kind B2 · utility
62Cited by
1References
14Claims
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Key dates
| Filing date | Jan 24, 2013 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Jan 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/875
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3):In/(In+Zn)=0.2 to 0.8 (1)In/(In+X)=0.29 to 0.99 (2)Zn/(X+Zn)=0.29 to 0.99 (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.