Semiconductor device
US8723220B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 12, 2010 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Jun 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A reverse conducting semiconductor device having an IGBT element region and a diode element region in one semiconductor substrate is provided. An electric current detection region is arranged adjacent to the IGBT element region, and a collector region of the IGBT element region is extended to connect with a collector region of the electric current detection region. Instability in the IGBT detection current caused by a boundary portion between the IGBT and the diode can be suppressed. In the same way, an electric current detection region is arranged adjacent to the diode element region, and a cathode region of the diode element region is extended to connect with a cathode region of the electric current detection region. Instability in the diode detection current caused by the boundary portion between the IGBT and the diode can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.