Non-volatile semiconductor memory device and method of reading data thereof
US8724397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2012 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Dec 5, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory string includes a semiconductor layer, a charge accumulation layer, and a conductive layer. The semiconductor layer extends in a direction perpendicular to the semiconductor substrate and functions as a body of a memory cell. The charge accumulation layer may accumulate charges. The conductive layer sandwiches the charge accumulation layer with the semiconductor layer, and functions as a gate of the memory cell. The control circuit performs, before a read operation, a refresh operation of rendering the selected memory cell and a non-selected memory cell conductive to conduct a current from a first end to a second end of the memory string.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.