Inventor · Chigasaki, JP

Masanobu Shirakawa

245Patents
11h-index
84Co-inventors
83Inventor score

Filing activity: Dec 25, 2003 → Jul 10, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8570802B2 Nonvolatile semiconductor memory device capable of speeding up write operation Physics 30 Active
US8958247B2 Semiconductor memory device Physics 26 Active
US9767910B1 Semiconductor memory device and memory system Physics 20 Active
US9269445B1 Semiconductor memory device Physics 18 Active
US9396775B2 Semiconductor memory device including a control circuit and at least two memory cell arrays Physics 18 Active
US8526241B2 Non-volatile semiconductor memory device capable of improving failure-relief efficiency Physics 17 Active
US10431299B2 Semiconductor storage device and memory system Electricity 15 Active
US9704570B2 Semiconductor memory device and memory system Physics 14 Active
US9136007B2 Semiconductor memory device storing management data redundantly in different pages Physics 13 Active
US10120584B2 Semiconductor memory device including a control circuit and at least two memory cell arrays Physics 11 Active
US8724397B2 Non-volatile semiconductor memory device and method of reading data thereof Physics 11 Active
US9214238B2 Semiconductor memory device Electricity 11 Active
US9659663B2 Semiconductor memory device Physics 8 Active
US8767466B2 Non-volatile semiconductor memory device Physics 8 Active
US8269837B2 Digital camera and image processing apparatus Electricity 7 Active
US9355731B2 Semiconductor memory device and data erasing method Electricity 7 Active
US10204680B2 Semiconductor storage device and memory system Electricity 7 Active
US9548127B1 Memory system Physics 7 Active
US9911498B2 Semiconductor memory device and writing operation method thereof Physics 7 Active
US9721666B2 Memory system Physics 6 Active
US9613713B2 Semiconductor memory device Physics 6 Active
US10276243B2 Semiconductor memory device and writing operation method thereof in which first memory cells of a page that are in a first group of contiguous columns are programmed and verified separately from second memory cells of the same page that are in a second group of contiguous columns that does not overlap with the first group Physics 6 Active
US10096366B2 Memory system including multi-plane flash memory and controller Physics 6 Active
US10748589B1 Memory system Physics 6 Active
US9349464B2 Non-volatile semiconductor device Electricity 6 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.