Semiconductor device dielectric interface layer
US8728832B2 · kind B2 · utility
522Cited by
61References
20Claims
0Family size
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Key dates
| Filing date | May 7, 2012 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | May 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.