Solid-state imaging device, production method thereof, and electronic device
US8728852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2011 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Jul 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.