Small footprint phase change memory cell

US8728859B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Matthew J. Breitwisch · Yorktown Heights, US
• Eric A. Joseph · White Plains, US
• Chung H. Lam · Williston, US
• Hsiang-Lan Lung · Ardsley, US

Key dates

• Filing date: Aug 12, 2010
• Grant date: May 20, 2014
• Expiry date: Feb 9, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/063

Abstract

An example embodiment disclosed is a method for fabricating a phase change memory cell. The method includes forming a non-sublithographic via within an insulating substrate. The insulating substrate is embedded on the same layer as a first metalization layer (Metal 1) of a semiconductor wafer, and includes a bottom and a sidewall. A sublithographic aperture is formed through the bottom of the non-sublithographic via and extends to a buried conductive material. The sublithographic aperture is filled with a conductive non-phase change material. Furthermore, phase change material is deposited within the non-sublithographic via.