Semiconductor device and method for manufacturing the same

US8728881B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huilong Zhu · Poughkeepsie, US
• Haizhou Yin · Poughkeepsie, US
• Zhijiong Luo · Poughkeepsie, US

Key dates

• Filing date: Nov 25, 2011
• Grant date: May 20, 2014
• Expiry date: Nov 25, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/751

Abstract

Semiconductor devices and methods for manufacturing the semiconductor devices are disclosed. A semiconductor device includes a substrate, a fin formed above the substrate with a semiconductor layer formed between the substrate and the fin, and a gate stack crossing over the fin. The fin and the semiconductor layer may include different materials and have etching selectivity with respect to each other. A patterning of the fin can be stopped reliably on the semiconductor layer. Therefore, it is possible to better control the height of the fin and thus the channel width of the final device.