Method and system for ion-assisted processing
US8728951B2 · kind B2 · utility
1Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2012 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Jul 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31732
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate, and establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.