Multi-nary group IB and VIA based semiconductor
US8729543B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2011 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Sep 15, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.