Method of making bulk InGaN substrates and devices thereon
US8729559B2 · kind B2 · utility
36Cited by
106References
19Claims
0Family size
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Key dates
| Filing date | Oct 13, 2011 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Oct 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A relaxed epitaxial AlxInyGa(1-x-y)N layer on a substrate having a semipolar surface orientation includes a plurality of misfit dislocations in portions of the thickness of the epitaxial layer to reduce bi-axial strain to a relaxed state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.