Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making

US8729628B2 · kind B2 · utility

Assignee

• POWER INTEGRATIONS, INC. · US

Inventors

• Joseph Neil Merrett · Starkville, US
• Igor Sankin · Starkville, US

Key dates

• Filing date: Aug 14, 2012
• Grant date: May 20, 2014
• Expiry date: Jan 24, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide.