Method for making FINFETs and semiconductor structures formed therefrom

US8729638B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huilong Zhu · Poughkeepsie, US
• Zhijiong Luo · Poughkeepsie, US
• Haizhou Yin · Poughkeepsie, US

Key dates

• Filing date: Nov 30, 2011
• Grant date: May 20, 2014
• Expiry date: Nov 30, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/797

Abstract

A method for making FinFETs and semiconductor structures formed therefrom is disclosed, comprising: providing a SiGe layer on a Si semiconductor substrate and a Si layer on the SiGe layer, wherein the lattice constant of the SiGe layer matches that of the substrate; patterning the Si layer and the SiGe layer to form a Fin structure; forming a gate stack on top and both sides of the Fin structure and a spacer surrounding the gate stack; removing a portion of the Si layer which is outside the spacer with the spacer as a mask, while keeping a portion of the Si layer which is inside the spacer; removing a portion of the SiGe layer which is kept after the patterning, to form a void; forming an insulator in the void; and epitaxially growing stressed source and drain regions on both sides of the Fin structure and the insulator.