Patent · US Active

Via structure and method thereof

US8729713B2 · kind B2 · utility

0Cited by

2References

17Claims

0Family size

Assignee

SILEX MICROSYSTEMS AB · SE

Inventors

Thorbjörn Ebefors · Huddinge, SE
Edvard Kalvesten · Stuvsta-Snättringe, SE
Peter Agren · Huddinge, SE
Niklas Svedin · Höör, SE

Key dates

Filing date	Jul 28, 2011
Grant date	May 20, 2014
Priority date	—
Expiry date	Jan 24, 2032

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81B2207/096
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A vent hole precursor structure (26) in an intermediate product for a semi-conductor device has delicate structures (27, 28), and said intermediate product has a cavity (21) with a pressure therein differing from the pressure of the surroundings. The intermediate product comprises a first wafer (20) in which there is formed a depression (21). The first wafer is bonded to a second wafer (22) comprising a device layer (23) from which the structures (27, 28) are to be made by etching. A hole or groove (26) having a predefined depth extends downwards into the device layer, such that the cavity (21) during etching is opened up before the etching procedure breaks through the device layer (23) to form the structures (27, 28).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.