MRAM with metal gate write conductors
US8730719B1 · kind B1 · utility
1Cited by
14References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 5, 2011 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Dec 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment of the invention, there is provided a magnetic random access (MRAM) device. The device comprises a plurality of MRAM cells, wherein each MRAM cell comprises a magnetic bit, and write conductors defined by conductors patterned in a second metal layer above the magnetic bit; and a gate formed below the magnetic bit between a source and a drain; and addressing circuits to address the MRAM cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.