Patent · US Active

Method for detecting embedded voids in a semiconductor substrate

US8735182B2 · kind B2 · utility

0Cited by

7References

16Claims

0Family size

Assignee

IMEC · BE

Inventors

Leonardus Leunissen · Ludwigshafen, DE
Sandip Halder · Bierbeek, BE
Eric Beyne · Heverlee, BE

Key dates

Filing date	Jun 7, 2012
Grant date	May 27, 2014
Priority date	—
Expiry date	Jun 7, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for detecting embedded voids present in a structure formed in or on a semiconductor substrate is described. The method includes performing a processing step P1 for forming the structure; measuring the mass M1 of the substrate; performing thermal treatment; measuring the mass M2 of the substrate; calculating the mass difference between the mass of the substrate measured before and after the performed thermal treatment; and deducing the presence of embedded voids in the structure by comparing the mass difference with a pre-determined value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.