Integrated circuit resistor fabrication with dummy gate removal
US8735258B2 · kind B2 · utility
3Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2012 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Feb 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating a semiconductor device including a metal gate transistor and a resistor are provided. A method includes providing a substrate including a transistor device region and an isolation region, forming a dummy gate over the transistor device region and a resistor over the isolation region, and implanting the resistor with a dopant. The method further includes wet etching the dummy gate to remove the dummy gate, and then forming a metal gate over the transistor device region to replace the dummy gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.