Methods of selectively forming silicon-on-insulator structures using selective expitaxial growth process
US8735265B2 · kind B2 · utility
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Key dates
| Filing date | Apr 8, 2011 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Jan 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02675
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon based optical waveguide can include forming a silicon-on-insulator structure including a non-crystalline silicon portion and a single crystalline silicon portion of an active silicon layer in the structure. The non-crystalline silicon portion can be replaced with an amorphous silicon portion and maintaining the single crystalline silicon portion and the amorphous portion can be crystallized using the single crystalline silicon portion as a seed to form a laterally grown single crystalline silicon portion including the amorphous and single crystalline silicon portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.