Patent · US Active

Method of contacting a doping region in a semiconductor substrate

US8735289B2 · kind B2 · utility

0Cited by

5References

10Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gerhard Prechtl · Rosegg, AT
Andreas Meiser · Unterhaching, DE
Thomas Ostermann · Velden am Wörther See, AT

Key dates

Filing date	Nov 29, 2010
Grant date	May 27, 2014
Priority date	—
Expiry date	Jun 23, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/645

Abstract

According to an embodiment, a method for manufacturing a semiconductor device is provided. The method includes providing a mask layer which is used as an implantation mask when forming a doping region and which is used as an etching mask when forming an opening and a contact element formed in the opening. The contact element is in contact with the doping region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.