Nitride based semiconductor device and method for manufacturing the same
US8735941B2 · kind B2 · utility
8Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2011 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Mar 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
Disclosed herein is a nitride based semiconductor device including: a base substrate; an epitaxial growth layer disposed on the base substrate and generating a 2-dimensional electron gas in an inner portion thereof; and an electrode structure disposed on the epitaxial growth layer, wherein the electrode structure includes: a gate electrode; a source electrode disposed at one side of the gate electrode; and a drain electrode disposed at the other side of the gate electrode and having an extension part extended to the inner portion of the epitaxial growth layer to contact the 2-dimensional electron gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.