Tunable schottky diode with depleted conduction path

US8735950B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Weize Chen · Phoenix, US
• Xin Lin · Phoenix, US
• Patrice M. Parris · Phoenix, US

Key dates

• Filing date: Sep 6, 2012
• Grant date: May 27, 2014
• Expiry date: Sep 6, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/13

Abstract

A device includes a semiconductor substrate, first and second electrodes supported by the semiconductor substrate, laterally spaced from one another, and disposed at a surface of the semiconductor substrate to form an Ohmic contact and a Schottky junction, respectively. The device further includes a conduction path region in the semiconductor substrate, having a first conductivity type, and disposed along a conduction path between the first and second electrodes, a buried region in the semiconductor substrate having a second conductivity type and disposed below the conduction path region, and a device isolating region electrically coupled to the buried region, having the second conductivity type, and defining a lateral boundary of the device. The device isolating region is electrically coupled to the second electrode such that a voltage at the second electrode during operation is applied to the buried region to deplete the conduction path region.