Multi-layer polysilicon suppression of implant species penetration

US8735958B1 · kind B1 · utility

Assignee

• MACRONIX INTERNATIONAL CO., LTD. · TW

Inventors

• Chun-Ling Chiang · Hsinchu, TW
• Wen-Ming Chang · Taipei, TW
• Chun-Ming Cheng · Chuantou, TW
• Ling Yang · Nanhu, CN
• Kuang-Chao Chen · Hsinchu, TW

Key dates

• Filing date: Dec 27, 2012
• Grant date: May 27, 2014
• Expiry date: Dec 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6891

Abstract

A blocking semiconductor layer minimizes penetration of implant species into a semiconductor layer beneath the blocking semiconductor layer. The blocking semiconductor layer may have grains with relatively fine or small grain sizes and/or may have a dopant in a relatively low concentration to minimize penetration of implant species into the semiconductor layer beneath the blocking semiconductor layer.