Semiconductor devices
US8735974B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 16, 2010 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Mar 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
An object of the present application is to reduce the gate capacitance without lowering the withstand voltage of a semiconductor device and prevent generation of a leak current between main electrodes even when an oxide film is formed poorly. A semiconductor device of the present application comprises a gate electrode and a dummy gate electrode. The gate electrode is insulated from an emitter electrode and faces a part of a body region via an insulating film, the part of the body region separating a drift region and an emitter region from each other. The dummy gate electrode is electrically connected with the emitter electrode and is connected with the drift region and the body region via the insulating film. At least a part of the dummy gate electrode comprises a first conductive region of the same type as the drift region. In the dummy gate electrode, the emitter electrode is separated from the drift region by the first conductive region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.