Integrated circuit transistors with multipart gate conductors
US8735983B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2008 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Aug 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal-oxide-semiconductor transistors are provided. A metal-oxide-semiconductor transistor may be formed on a semiconductor substrate. Source and drain regions may be formed in the substrate. A gate insulator such as a high-K dielectric may be formed between the source and drain regions. A gate may be formed from multiple gate conductors. The gate conductors may be metals with different workfunctions. A first of the gate conductors may form a pair of edge gate conductors that are adjacent to dielectric spacers. An opening between the edge gate conductors may be filled with the second gate conductor to form a center gate conductor. A self-aligned gate formation process may be used in fabricating the metal-oxide-semiconductor transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.