Integrated hybrid hall effect transducer
US8736003B2 · kind B2 · utility
1Cited by
12References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2009 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Oct 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/01
Abstract
A Hall effect transducer in a semiconductor wafer comprises a first layer of semiconducting material, a second layer of semiconducting material, and a contact structure configured to provide a path for electrical current to pass through the second layer. The second layer has higher electron hole mobility than the first layer, and is epitaxially grown atop the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.