Nonvolatile memory device
US8737122B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2012 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Jun 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.