Nonvolatile semiconductor storage device
US8737134B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2012 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Jun 30, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/344
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor storage device according to an embodiment includes a drive circuit. A voltage applied to a dummy wire connected to a first dummy cell adjacent to a memory string is defined as a first dummy wire voltage, a voltage applied to a selection wire connected to a first memory cell adjacent to the first dummy cell is defined as a first selection wire voltage, and a voltage applied to a selection wire connected to a second memory cell adjacent to the first memory cell is defined as a second selection wire voltage. When the second selection wire voltage is lower than the first dummy wire voltage in an erase operation, the drive circuit controls voltages so that a difference between the first dummy wire voltage and the second selection wire voltage is less than a difference between the first dummy wire voltage and the first selection wire voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.