Eietsu Takahashi
57Patents
10h-index
35Co-inventors
78Inventor score
Filing activity: May 7, 1986 → Jun 25, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4779166A | Illuminating apparatus | Physics | 56 | Expired |
| US8199579B2 | Nonvolatile semiconductor memory device | Physics | 27 | Active |
| US8446777B2 | Non-volatile semiconductor memory device | Physics | 17 | Active |
| US8385126B2 | Nonvolatile semiconductor memory device | Physics | 17 | Active |
| US6877910B2 | Plastic ferrule | Performing Operations; Transporting | 17 | Expired |
| US9672926B2 | Apparatus and method of programming and verification for a nonvolatile semiconductor memory device | Physics | 15 | Active |
| US9025387B2 | Nonvolatile semiconductor memory device | Physics | 12 | Active |
| US8649221B2 | Nonvolatile semiconductor memory device | Physics | 11 | Active |
| US4747667A | Plastic lens array | Physics | 11 | Expired |
| US8599617B2 | Nonvolatile semiconductor memory device | Physics | 10 | Active |
| US9472295B2 | Nonvolatile semiconductor memory device | Physics | 10 | Active |
| US9691489B2 | Nonvolatile semiconductor memory device with first and second read operations with different read voltages | Physics | 9 | Active |
| US8149631B2 | Non-volatile semiconductor storage device | Physics | 9 | Active |
| US9805798B2 | Nonvolatile semiconductor memory device | Physics | 8 | Active |
| US8976597B2 | Electrically rewriteable nonvolatile semiconductor memory device | Physics | 8 | Active |
| US10186321B2 | Nonvolatile semiconductor memory device | Physics | 7 | Active |
| US9390800B2 | Semiconductor memory and semiconductor memory control method | Physics | 7 | Active |
| US9947415B2 | Nonvolatile semiconductor memory device having a control circuit that controls voltage applied to non-selected word lines connected to unselected memory cells | Physics | 7 | Active |
| US10818362B2 | Nonvolatile semiconductor memory device including a memory cell array and a control circuit applying a reading voltage | Physics | 5 | Active |
| US9530510B2 | Nonvolatile semiconductor memory device | Physics | 5 | Active |
| US8767478B2 | Non-volatile semiconductor storage device | Physics | 4 | Active |
| US8531891B2 | Non-volatile semiconductor storage device | Physics | 4 | Active |
| US10522227B2 | Semiconductor memory device applying different voltages to respective select gate lines | Electricity | 4 | Active |
| US9214237B2 | Nonvolatile semiconductor memory device | Physics | 4 | Active |
| US8737134B2 | Nonvolatile semiconductor storage device | Physics | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.