Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
US8741674B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2011 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Aug 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.