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US8741758B2 · kind B2 · utility

18Cited by
9References
19Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 18, 2013
Grant dateJun 3, 2014
Priority date
Expiry dateJan 18, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/36

Abstract

Methods and devices depicting fabrication of non-planar access devices having fins and narrow trenches, among which is a method that includes wet etching a conductor to form a recessed region and subsequently etching the conductor to form gates on the fins. The wet etching may include formation of recesses which are may be backfilled with a fill material to form spacers on the conductor. Portions of a plug may be removed during the wet etch to form overhanging spacers to provide further protection of the conductor during the dry etch.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.