Method of ionization
US8742373B2 · kind B2 · utility
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5References
16Claims
0Family size
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Key dates
| Filing date | Dec 10, 2010 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Jul 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma is formed from one or more gases in a plasma chamber using at least a first power and a second power. A first ion species is generated at said first power and a second ion species is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece at two different energies using at least a first bias voltage and a second bias voltage. This may enable implantation to two different depths. These ion species may be atomic ions or molecular ions. The molecular ions may be larger than the gases used to form the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.