Patent · US Active

Resistive memory devices with improved resistive changing elements

US8742387B2 · kind B2 · utility

2Cited by

12References

20Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Thomas Happ · Tarrytown, US
Franz Kreupl · Mountain View, US
Jan Boris Philipp · Peekskill, US
Petra Majewski · Munich, DE

Key dates

Filing date	Jun 25, 2008
Grant date	Jun 3, 2014
Priority date	—
Expiry date	Nov 27, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.