Graphene switching device including tunable barrier
US8742400B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2013 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Apr 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.