David Seo
36Patents
7h-index
53Co-inventors
68Inventor score
Filing activity: Apr 28, 2005 → Sep 26, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7602042B2 | Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same | Electricity | 17 | Expired |
| US7521704B2 | Memory device using multi-layer with a graded resistance change | Physics | 13 | Expired |
| US7400027B2 | Nonvolatile memory device having two or more resistance elements and methods of forming and using the same | Physics | 10 | Expired |
| US9306005B2 | Electronic device including graphene | Electricity | 10 | Active |
| US9105556B2 | Tunneling field-effect transistor including graphene channel | Performing Operations; Transporting | 10 | Active |
| US7935953B2 | Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same | Electricity | 9 | Active |
| US9064777B2 | Graphene switching device having tunable barrier | Electricity | 7 | Active |
| US9040957B2 | Field effect transistor using graphene | Emerging Cross-Sectional Technologies | 6 | Active |
| US9768062B1 | Method for forming low parasitic capacitance source and drain contacts | Electricity | 6 | Active |
| US9053932B2 | Methods of preparing graphene and device including graphene | Electricity | 6 | Active |
| US7821809B2 | Nonvolatile memory device and method including resistor and transistor | Physics | 5 | Expired |
| US8421131B2 | Graphene electronic device and method of fabricating the same | Electricity | 4 | Active |
| US8742400B2 | Graphene switching device including tunable barrier | Electricity | 4 | Active |
| US8084371B2 | Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor | Electricity | 4 | Active |
| US8310014B2 | Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor | Electricity | 3 | Active |
| US9130567B2 | Inverter device, NAND device, NOR device, and logic device including the same | Electricity | 3 | Active |
| US9054708B2 | Touch sensor and touch panel including the same | Performing Operations; Transporting | 2 | Active |
| US9359211B2 | Methods of fabricating graphene using alloy catalyst | Chemistry; Metallurgy | 2 | Active |
| US9048310B2 | Graphene switching device having tunable barrier | Electricity | 2 | Active |
| US9136336B2 | Inverter logic devices including graphene field effect transistor having tunable barrier | Electricity | 2 | Active |
| US9166062B2 | Field effect transistor using graphene | Emerging Cross-Sectional Technologies | 2 | Active |
| US9108848B2 | Methods of manufacturing and transferring larger-sized graphene | Emerging Cross-Sectional Technologies | 2 | Active |
| US9525076B2 | Memory device using graphene as charge-trap layer and method of operating the same | Emerging Cross-Sectional Technologies | 1 | Active |
| US9595610B2 | Field effect transistor and method of fabricating the same | Electricity | 1 | Active |
| US9306021B2 | Graphene devices and methods of fabricating the same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.